AOTF11N60 Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

AOTF11N60 N-Channel MOSFET

AOTF11N60

AOTF11N60
AOTF11N60 AOTF11N60
zoom Click to view a larger image
Part Number AOTF11N60
Manufacturer INCHANGE
Description ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 39 A PD Total Dissipation @TC=25℃ 50 W TJ Max. Operati.
Features
·Drain Current
  –ID= 11A@ TC=25℃
·Drain Source Voltage- : VDSS= 600V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 39 A PD Total Dissipation @TC=25℃ 50 W TJ Ma.
Datasheet Datasheet AOTF11N60 Data Sheet
PDF 246.34KB
Distributor Stock Price Buy

AOTF11N60

Alpha & Omega Semiconductors
AOTF11N60
Part Number AOTF11N60
Manufacturer Alpha & Omega Semiconductors
Title 11A N-Channel MOSFET
Description Product Summary The AOT11N60L & AOTF11N60L & AOTF11N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capab.
Features Dissipation B TC=25°C Derate above 25oC PD 272 2.2 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS AOT11N60L 65 0.5 Maximum Junction-to-Case RqJC 0.46 * Drain current limited by maximum junction temper.


similar datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 AOTF11N60L
Alpha & Omega Semiconductors
11A N-Channel MOSFET Datasheet
2 AOTF11N62
Alpha & Omega Semiconductors
N-Channel MOSFET Datasheet
3 AOTF11N62
INCHANGE
N-Channel MOSFET Datasheet
4 AOTF11N70
INCHANGE
N-Channel MOSFET Datasheet
5 AOTF11N70
Alpha & Omega Semiconductors
11A N-Channel MOSFET Datasheet
6 AOTF11C60
Alpha & Omega Semiconductors
11A N-Channel MOSFET Datasheet
7 AOTF11S60
INCHANGE
N-Channel MOSFET Datasheet
8 AOTF11S60
Alpha & Omega Semiconductors
Power Transistor Datasheet
9 AOTF11S60L
Alpha & Omega Semiconductors
Power Transistor Datasheet
10 AOTF11S65
Alpha & Omega Semiconductors
650V 11A Power Transistor Datasheet
More datasheet from INCHANGE
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad