AOT15S65 Datasheet. existencias, precio

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AOT15S65 Power Transistor

AOT15S65


AOT15S65
Part Number AOT15S65
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AOT15S65

Freescale
AOT15S65
Part Number AOT15S65
Manufacturer Freescale
Title Power Transistor
Description The AOT15S65 & AOB15S65 & AOTF15S65 have been fabricated using the advanced αMOS TM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can.
Features VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 750V 60A 0.29Ω 17.2nC 3.6µJ D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Symbol Parameter AOT15S65/AOB15S65 VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C C AOTF15S65 650 ±30 15* 10* 60 2.4 86 173 AOTF15S65L Units V V VGS TC=25° C TC.


AOT15S65

INCHANGE
AOT15S65
Part Number AOT15S65
Manufacturer INCHANGE
Title N-Channel MOSFET
Description ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Pluse 6.
Features
·Drain Current
  –ID= 15A@ TC=25℃
·Drain Source Voltage- : VDSS= 650V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.78Ω(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V.


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