AOT15S60L Datasheet. existencias, precio

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AOT15S60L Power Transistor

AOT15S60L

AOT15S60L
AOT15S60L AOT15S60L
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Part Number AOT15S60L
Manufacturer Alpha & Omega Semiconductors
Description Product Summary The AOT15S60L & AOB15S60L & AOTF15S60L & AOTF15S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new a.
Features 25°C Power Dissipation B Derate above 25oC PD MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS Maximum Junction-to-Case RθJC
* Drain current limited by maximum junction temperature. S D G G AOB15S60L G S AOT15S60L/AOB15S60L 600 ±30 15 10 63 2.4 86 173 208 1.67 100 20 -55 to 150 300 AOT15S60L/AOB15S60L 65 0.5 0.6 AOTF15S60L 15
* 10
* 27..
Datasheet Datasheet AOT15S60L Data Sheet
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AOT15S60L

INCHANGE
AOT15S60L
Part Number AOT15S60L
Manufacturer INCHANGE
Title N-Channel MOSFET
Description ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Pluse 6.
Features
·Drain Current
  –ID= 15A@ TC=25℃
·Drain Source Voltage- : VDSS= 600V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.78Ω(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V.


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