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9N150 |
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| Part Number | 9N150 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. 3 2 1 TO-247 Fig. |
| Features |
Type STW9N150
VDSS 1500 V
RDS(on) < 2.5 Ω
■ 100% avalanche tested ■ Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances ■ High speed switching ■ Very low on-resistance ID Pw 8 A 320 W Application ■ Switching applications Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching charact. |
| Datasheet |
 9N150 Data Sheet
PDF 254.34KB |
| Distributor | Stock | Price | Buy |
|---|
9N150 |
| Part Number | 9N150 |
| Manufacturer | UTC |
| Title | 1500V N-CHANNEL POWER MOSFET |
| Description | The UTC 9N150 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES0 * RDS(ON) ≤ 2.1 Ω @ VGS=10V, ID=4.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy S. |
| Features | * RDS(ON) ≤ 2.1 Ω @ VGS=10V, ID=4.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free 9N150L-T47-T 9N150G-T47-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-247 Pin Assignment 1 2 3 G D S Packing. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 9N100 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 2 | 9N120-E3 |
UTC |
N-CHANNEL POWER MOSFET |
|
| 3 | 9N40 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 9N40 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 5 | 9N50 |
UTC |
N-CHANNEL POWER MOSFET |
|
| 6 | 9N50 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 7 | 9N50C |
Fairchild Semiconductor |
FQI9N50C |
|
| 8 | 9N50K-MT |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 9 | 9N60 |
Inchange |
N-Channel MOSFET Transistor |
|
| 10 | 9N60M6 |
STMicroelectronics |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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