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9N120-E3 |
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| Part Number | 9N120-E3 |
| Manufacturer | UTC |
| Description | The UTC 9N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES0 * RDS(ON) ≤ 1.8 Ω @ VGS=10V, ID=4.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness S. |
| Features |
* RDS(ON) ≤ 1.8 Ω @ VGS=10V, ID=4.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 9N120L-T47-T 9N120G-T47-T Pin Assignment: G: Gate D: Drain S: Source Package TO-247 Pin Assignment 1 2 3 G D S Packing Tube MARKING www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 5 QW-R205-897.b 9N120-E3 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise. |
| Datasheet |
 9N120-E3 Data Sheet
PDF 270.80KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 9N100 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 2 | 9N150 |
STMicroelectronics |
N-channel MOSFET |
|
| 3 | 9N150 |
UTC |
1500V N-CHANNEL POWER MOSFET |
|
| 4 | 9N40 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | 9N40 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 6 | 9N50 |
UTC |
N-CHANNEL POWER MOSFET |
|
| 7 | 9N50 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 8 | 9N50C |
Fairchild Semiconductor |
FQI9N50C |
|
| 9 | 9N50K-MT |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 10 | 9N60 |
Inchange |
N-Channel MOSFET Transistor |
|
Desde 2024. D4U Semiconductor.
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