Description | This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufactur... |
Features | 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 75 75 ± 16 80 80 320 300 2 12 930 -55 to 175 Unit V V V A A A W W/... |
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![]() ST Microelectronics |
N-CHANNEL Power MOSFET |
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![]() STMicroelectronics |
STP80NF03L-04 |
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![]() STMicroelectronics |
N-CHANNEL POWER MOSFET |
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![]() STMicroelectronics |
STB80NF55-06 |
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![]() ON Semiconductor |
Power MOSFET |
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![]() GFD |
MOSFET |
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![]() Siemens |
SPB80N03L |
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![]() NEC |
NP80N055 |
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![]() Inchange Semiconductor |
N-Channel MOSFET |
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![]() UTC |
60V N-CHANNEL POWER MOSFET |
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Desde 2024. D4U Semiconductor.
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