| Description | This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufactur... |
| Features | 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 75 75 ± 16 80 80 320 300 2 12 930 -55 to 175 Unit V V V A A A W W/... |
| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
|
|
|
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
|
|
|
STMicroelectronics |
STP80NF03L-04 |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
|
|
|
STMicroelectronics |
STB80NF55-06 |
|
|
|
|
ON Semiconductor |
Power MOSFET |
|
|
|
|
GFD |
MOSFET |
|
|
|
|
Siemens |
SPB80N03L |
|
|
|
|
NEC |
NP80N055 |
|
|
|
|
Inchange Semiconductor |
N-Channel MOSFET |
|
|
|
|
UTC |
60V N-CHANNEL POWER MOSFET |
|
Desde 2024. D4U Semiconductor.
|
Contáctenos
|
Política de Privacidad
