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80N055 |
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| Part Number | 80N055 |
| Manufacturer | NEC |
| Description | These products are N-channel MOS Field Effect www.DataSheet4UT.rcaonmsistor designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resis... |
| Features |
• Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) • Low Ciss : Ciss = 2900 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER NP80N055CLE NP80N055DLE NP80N055ELE PACKAGE TO-220AB TO-262 TO-263 (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 55 Gate to Source Voltage Drain Current (DC) Note1 Drain Current (Pulse) Note2 VGSS ID(DC) ID(pulse) ±20 ±80 ±200 Total Power Dissipation (TA = 25 °C) PT 1.8 Total Power Dissipation... |
| Document |
 80N055 Data Sheet
PDF 110.69KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | 80N02 |
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| 2 | 80N03 |
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| 8 | 80N08A |
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| 9 | 80N10 |
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Desde 2024. D4U Semiconductor.
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