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80N06 |
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| Part Number | 80N06 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V V. |
| Features | DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=80A ;VGS= 0 RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VGS= 10V; ID=40A VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 60V; VGS= 0 MIN TYPE MAX UNIT 60 V 2.0 4.0 V 1.5 V 0.01 Ω ±100 nA 250 µA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our prod. |
| Datasheet |
 80N06 Data Sheet
PDF 195.13KB |
| Distributor | Stock | Price | Buy |
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80N06 |
| Part Number | 80N06 |
| Manufacturer | UTC |
| Title | 60V N-CHANNEL POWER MOSFET |
| Description | The UTC 80N06 is an N-channel MOSFET using UTC advanced technology. The UTC 80N06 is suitable for power supply (secondary synchronous rectification), industrial and primary switch etc. FEATURES * RDS(ON) < 8.5mΩ @ VGS = 10 V, ID = 40 A SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source ORDERIN. |
| Features | * RDS(ON) < 8.5mΩ @ VGS = 10 V, ID = 40 A SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 80N06L-TA3-T 80N06G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 5 QW-R209-168. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 80N02 |
ON Semiconductor |
Power MOSFET |
|
| 2 | 80N03 |
GFD |
MOSFET |
|
| 3 | 80N03L |
Siemens |
SPB80N03L |
|
| 4 | 80N055 |
NEC |
NP80N055 |
|
| 5 | 80N07 |
UTC |
N-CHANNEL MOSFET |
|
| 6 | 80N08 |
Unisonic Technologies |
N-CHANNEL MOSFET |
|
| 7 | 80N08A |
INCHANGE |
N-Channel MOSFET |
|
| 8 | 80N10 |
IXYS |
Power MOSFETs |
|
| 9 | 80N240K6 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 10 | 80N30 |
Rectron |
N-Channel Enhancement Mode Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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