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80N06 |
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| Part Number | 80N06 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ... |
| Features |
DSS Drain-Source Breakdown Voltage
VGS= 0; ID=250µA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
VSD
Diode Forward On-Voltage
IS=80A ;VGS= 0
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VGS= 10V; ID=40A VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 60V; VGS= 0
MIN TYPE MAX UNIT
60
V
2.0
4.0
V
1.5
V
0.01
Ω
±100 nA
250
µA
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our prod... |
| Document |
 80N06 Data Sheet
PDF 195.13KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 80N02 |
ON Semiconductor |
Power MOSFET |
|
| 2 | 80N03 |
GFD |
MOSFET |
|
| 3 | 80N03L |
Siemens |
SPB80N03L |
|
| 4 | 80N055 |
NEC |
NP80N055 |
|
| 5 | 80N06 |
UTC |
60V N-CHANNEL POWER MOSFET |
|
| 6 | 80N07 |
UTC |
N-CHANNEL MOSFET |
|
| 7 | 80N08 |
Unisonic Technologies |
N-CHANNEL MOSFET |
|
| 8 | 80N08A |
INCHANGE |
N-Channel MOSFET |
|
| 9 | 80N10 |
IXYS |
Power MOSFETs |
|
| 10 | 80N240K6 |
STMicroelectronics |
N-channel Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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