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7N60B |
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| Part Number | 7N60B |
| Manufacturer | Inchange Semiconductor |
| Description | INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 7N60B ·FEATURES ·Drain Current –ID= 7.4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high efficiency switch mode powe. |
| Features |
·Drain Current –ID= 7.4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high efficiency switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7.4 A IDM Drain Current-Single Plused 29.6 A PD Total Dissipation @TC=25℃ 142 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperatu. |
| Datasheet |
 7N60B Data Sheet
PDF 161.03KB |
| Distributor | Stock | Price | Buy |
|---|
7N60B |
| Part Number | 7N60B |
| Manufacturer | IXYS Corporation |
| Title | Hiperfast IGBT |
| Description | www.DataSheet4U.com HiPerFASTTM IGBT IXGA 7N60B IXGP 7N60B VCES IC25 VCE(sat) tfi = 600 V = 14 A = 2 V = 150 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 2. |
| Features |
G = Gate, E = Emitter,
E
C (TAB)
C = Collector, TAB = Collector
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, (TO-220) TO-220 TO-263
• International standard packages JEDEC TO-263 surface mountable and JEDEC TO-220 AB • Medium frequency IGBT • High current handling capability • HiPerFASTTM HDMOSTM process • MOS Gate turn-on - drive sim. |
7N60B |
| Part Number | 7N60B |
| Manufacturer | Fairchild Semiconductor |
| Title | 600V N-Channel MOSFET |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a. |
| Features |
• 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V • Low gate charge ( typical 38 nC) • Low Crss ( typical 23 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • TO-220F package isolation = 4.0kV (Note 6) D G DS TO-220 SSP Series GD S TO-220F SSS Series G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Curren. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 7N60 |
nELL |
N-Channel Power MOSFET |
|
| 2 | 7N60 |
UTC |
N-CHANNEL MOSFET |
|
| 3 | 7N60 |
KIA |
N-CHANNEL MOSFET |
|
| 4 | 7N60 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | 7N60-CB |
UTC |
N-CHANNEL MOSFET |
|
| 6 | 7N60-F |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 7 | 7N60-M |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 8 | 7N60-Q |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 9 | 7N60-R |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 10 | 7N60-TC |
UTC |
N-CHANNEL MOSFET |
|
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