7N60B |
Part Number | 7N60B |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o... |
Features |
• 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V • Low gate charge ( typical 38 nC) • Low Crss ( typical 23 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • TO-220F package isolation = 4.0kV (Note 6) D G DS TO-220 SSP Series GD S TO-220F SSS Series G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1)... |
Document |
7N60B Data Sheet
PDF 912.54KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | 7N60 |
nELL |
N-Channel Power MOSFET | |
2 | 7N60 |
UTC |
N-CHANNEL MOSFET | |
3 | 7N60 |
KIA |
N-CHANNEL MOSFET | |
4 | 7N60 |
INCHANGE |
N-Channel MOSFET | |
5 | 7N60-CB |
UTC |
N-CHANNEL MOSFET | |
6 | 7N60-F |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
7 | 7N60-M |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
8 | 7N60-Q |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
9 | 7N60-R |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
10 | 7N60-TC |
UTC |
N-CHANNEL MOSFET |