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| Part Number | 3N80 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 3N80 |
| Manufacturer | Unisonic Technologies |
| Title | N-CHANNEL MOSFET |
| Description | The UTC 3N80 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) < 4.2Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical. |
| Features | * RDS(ON) < 4.2Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 11 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free 3N80L-TA3-T 3N80G-TA3-T 3N80L-TF3-T 3N80G-TF3-T 3N80L-TF1-T 3N80G-TF1-T . |
| Part Number | 3N80 |
| Manufacturer | nELL |
| Title | N-Channel Power MOSFET |
| Description | (3A, 800Volts) The Nell 3N80 is a three-terminal silicon device with current conduction capability of 3A, fast switching speed, low on-state resistance, breakdown voltage rating of 800V ,and max. threshold voltage of 5 volts. They are designed for use in applications. such as switched mode power s. |
| Features | RDS(ON) = 3.80Ω (typ.) @ VGS = 10V Ultra low gate charge(35nC max.) Low reverse transfer capacitance (CRSS = 23pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (3N80A) GDS TO-220F (3N80AF) D (Drain) G (Gate) PRODUCT SUMMARY ID (A) 3 VDSS (V) 800 RDS(ON) (Ω) (typ.) 3.80 @ VGS = 10V QG(nC) max. 35. |
similar datasheet
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|---|---|---|---|---|
| 1 | 3N80A |
Samsung semiconductor |
SSS3N80A |
|
| 2 | 3N80C |
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| 3 | 3N80Z |
UTC |
N-CHANNEL MOSFET |
|
| 4 | 3N81 |
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(3N8x) Silicon Controlled Switches |
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| 5 | 3N82 |
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| 6 | 3N83 |
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| 7 | 3N100E |
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| 8 | 3N1012 |
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| 9 | 3N10L26 |
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| 10 | 3N120-E3 |
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1200V N-CHANNEL POWER MOSFET |
|
Desde 2024. D4U Semiconductor.
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