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3N120-E3 |
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| Part Number | 3N120-E3 |
| Manufacturer | UTC |
| Description | The UTC 3N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES0 * RDS(ON) ≤ 7.0 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness S. |
| Features |
* RDS(ON) ≤ 7.0 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 3N120L-TA3-T 3N120G-TA3-T TO-220 3N120L-TF1-T 3N120G-TF1-T TO-220F1 3N120L-TQ2-T 3N120G-TQ2-T TO-263 3N120L-TQ2-R 3N120G-TQ2-R TO-263 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel www.unisonic.com.tw Copyright © 202. |
| Datasheet |
 3N120-E3 Data Sheet
PDF 281.81KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3N124 |
ETC |
N-channel Transistor |
|
| 2 | 3N125 |
ETC |
N-channel Transistor |
|
| 3 | 3N126 |
ETC |
N-channel Transistor |
|
| 4 | 3N128 |
Motorola |
MOSFET AMPLIFIER |
|
| 5 | 3N128 |
General Electric Solid State |
Silicon MOS Transistor |
|
| 6 | 3N100E |
Motorola |
MTB3N100E |
|
| 7 | 3N1012 |
Infineon |
Power-Transistor |
|
| 8 | 3N10L26 |
Infineon |
Power-Transistor |
|
| 9 | 3N140 |
ETC |
N-CHANNEL DUAL-GATE TRANSISTOR |
|
| 10 | 3N142 |
ETC |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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