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| Part Number | 3DD13007 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 3DD13007 |
| Manufacturer | TRANSYS Electronics |
| Title | Plastic-Encapsulated Transistors |
| Description | Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 3DD13007 FEATURES Power dissipation PCM: 2 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3. EMITTER TRANSISTOR (NPN) TO-220 aSheet4U.com Collector current 8 A ICM: Collector-base voltage 700 V V(BR)CBO: Operating and storage junction . |
| Features | Power dissipation PCM: 2 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3. EMITTER TRANSISTOR (NPN) TO-220 aSheet4U.com Collector current 8 A ICM: Collector-base voltage 700 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Coll. |
| Part Number | 3DD13007 |
| Manufacturer | SeCoS |
| Title | NPN Transistor |
| Description | Elektronische Bauelemente 3DD13007 8A , 700V NPN Plastic-Encapsulated Transistor FEATURES Power switching applications RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-220J CLASSIFICATION OF tS Product-Rank 3DD13007-A Range 3-4(µs) 3DD13007-B 4-5(µs) 3DD13007-C 5-6(µ. |
| Features | Power switching applications RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-220J CLASSIFICATION OF tS Product-Rank 3DD13007-A Range 3-4(µs) 3DD13007-B 4-5(µs) 3DD13007-C 5-6(µs) ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current -. |
| Part Number | 3DD13007 |
| Manufacturer | JGD |
| Title | TRANSISTOR |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13007 TRANSISTOR£¨NPN £© TO¡ª 220 FEATURES Power dissipation PCM : 2 W£¨ Tamb=25¡æ£© Collector current ICM: 8 A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range T J. |
| Features | Power dissipation PCM : 2 W£¨ Tamb=25¡æ£© Collector current ICM: 8 A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CB. |
similar datasheet
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|---|---|---|---|---|
| 1 | 3DD13001 |
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| 2 | 3DD13001 |
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| 3 | 3DD13001 |
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| 4 | 3DD13001 |
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| 7 | 3DD13001A |
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| 8 | 3DD13001A1 |
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| 9 | 3DD13001B |
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| 10 | 3DD13001H |
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Desde 2024. D4U Semiconductor.
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