Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 3DD13003 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 3DD13003 |
| Manufacturer | Jiangsu Changjiang Electronics |
| Title | TRANSISTOR |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13003 FEATURES TRANSISTOR ( NPN ) TO-220 1. BASE 2. COLLECTOR 3. EMITTER · power switching applications www.DataSheet4U.com MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ. |
| Features |
TRANSISTOR ( NPN )
TO-220
1. BASE 2. COLLECTOR 3. EMITTER
· power switching applications www.DataSheet4U.com MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 700 400 9 1.5 2 -55-150 Units V . |
| Part Number | 3DD13003 |
| Manufacturer | GME |
| Title | High Voltage Fast Switching NPN Power Transistor |
| Description | Production specification High Voltage Fast Switching NPN Power Transistor 3DD13003 FEATURES PC=1W(Mounted on ceramic substrate). High speed switching. Die size:1.34*1.34 Small flat package. Pb Lead-free APPLICATIONS Mainly used for compact electronic energy saving lamps, electronic bal. |
| Features |
PC=1W(Mounted on ceramic substrate). High speed switching. Die size:1.34*1.34 Small flat package. Pb Lead-free APPLICATIONS Mainly used for compact electronic energy saving lamps, electronic ballast and mobile phone chargers power switch circuit ORDERING INFORMATION Type No. Marking 3DD13003 13003 SOT-89S Package Code SOT-89S MAXIMUM RATING @ Ta=25℃ unless otherwise specified S. |
| Part Number | 3DD13003 |
| Manufacturer | TRANSYS Electronics |
| Title | Plastic-Encapsulated Transistors |
| Description | Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 3DD13003 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-220 1. BASE aSheet4U.com 1.5 W (Tamb=25℃) 2. COLLECTOR 3. EMITTER Collector current 1.5 A ICM: Collector-base voltage V(BR)CBO: 700 V Operating and storage. |
| Features | Power dissipation PCM: TRANSISTOR (NPN) TO-220 1. BASE aSheet4U.com 1.5 W (Tamb=25℃) 2. COLLECTOR 3. EMITTER Collector current 1.5 A ICM: Collector-base voltage V(BR)CBO: 700 V Operating and storage junction temperature range ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off c. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3DD13001 |
GME |
High Voltage Fast Switching NPN Power Transistor |
|
| 2 | 3DD13001 |
Jiangsu Changjiang Electronics |
TRANSISTOR |
|
| 3 | 3DD13001 |
TRANSYS Electronics |
Plastic-Encapsulated Transistors |
|
| 4 | 3DD13001 |
SeCoS |
NPN Transistor |
|
| 5 | 3DD13001 |
Kexin |
NPN Transistors |
|
| 6 | 3DD13001 |
WEJ |
NPN Transistor |
|
| 7 | 3DD13001A |
JILIN SINO-MICROELECTRONICS |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
|
| 8 | 3DD13001A1 |
Huajing Microelectronics |
Silicon NPN Transistor |
|
| 9 | 3DD13001B |
JCST |
TO-92 Plastic-Encapsulate Transistors |
|
| 10 | 3DD13001H |
JILIN SINO-MICROELECTRONICS |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|