| Description | 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING 4.6MAX 1.6±0.2 Dimensions in mm 1.5±0.1 FEATURES • High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm • High efficiency:55% typ. • Source case type SOT-89 package (connected i... |
| Features |
• High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm • High efficiency:55% typ. • Source case type SOT-89 package (connected internally to source) 1 2 3 APPLICATION For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets. 1.5 0.53 MAX 0.48MAX 1 : DRAIN 2 : SOURCE 3 : GATE 0.4 +0.03 -0.05 3.0 MARKING SOT-89 MARKING TYPE No. K1 LOT No. ABSOLUTE MAXIMUM... |
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| No. | Part # | Manufacture | Description | Datasheet |
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VBsemi |
N-Channel MOSFET |
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Toshiba |
N-Channel MOSFET |
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Mitsubishi Electric Semiconductor |
RF POWER MOS FET |
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Mitsubishi Electric Semiconductor |
RF POWER MOS FET |
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Sanyo Semicon Device |
N-Channel MOSFET |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET |
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Renesas |
Silicon N-Channel MOSFET |
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Fuji Electric |
N-channel MOS-FET |
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Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET |
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