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2SK2973 |
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| Part Number | 2SK2973 |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Description | 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING 4.6MAX 1.6±0.2 Dimensions in mm 1.5±0.1 FEATURES • High power gain:Gpe≥13dB @V... |
| Features |
• High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm • High efficiency:55% typ. • Source case type SOT-89 package (connected internally to source) 1 2 3 APPLICATION For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets. 1.5 0.53 MAX 0.48MAX 1 : DRAIN 2 : SOURCE 3 : GATE 0.4 +0.03 -0.05 3.0 MARKING SOT-89 MARKING TYPE No. K1 LOT No. ABSOLUTE MAXIMUM RATINGS (TC=25˚C, unless otherwise noted) Symbol VDSS VGSS Pch Tj Tstg Parameter Drain to source voltage Gate to source voltage Channel dissipation Junction temperature Storage temperature Conditions... |
| Document |
 2SK2973 Data Sheet
PDF 33.56KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2972 |
VBsemi |
N-Channel MOSFET |
|
| 2 | 2SK2972 |
Toshiba |
N-Channel MOSFET |
|
| 3 | 2SK2974 |
Mitsubishi Electric Semiconductor |
RF POWER MOS FET |
|
| 4 | 2SK2975 |
Mitsubishi Electric Semiconductor |
RF POWER MOS FET |
|
| 5 | 2SK2976 |
Sanyo Semicon Device |
N-Channel MOSFET |
|
| 6 | 2SK2977LS |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 7 | 2SK2978 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 8 | 2SK2978 |
Renesas |
Silicon N-Channel MOSFET |
|
| 9 | 2SK2900-01 |
Fuji Electric |
N-channel MOS-FET |
|
| 10 | 2SK2901-01L |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET |
|
Desde 2024. D4U Semiconductor.
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