| Description | ·High Breakdown Voltage- : V(BR)CBO= 1100V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VAL... |
| Features | Sustaining Voltage Collector-Base Breakdown Voltage IC= 5mA; RBE= ∞ IC= 0.75A; IB1= -IB2= 0.15A; L= 5mH; clamped IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.75A; IB= 0.15A VBE(sat) Base-Emitter Saturation Voltage IC= 0.75A; IB= 0.15A ICBO Collector Cutoff Current VCB= 800V; IE=0 IEBO Emitter Cutoff Current V... |
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| No. | Part # | Manufacture | Description | Datasheet |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
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INCHANGE |
NPN Transistor |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
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INCHANGE |
NPN Transistor |
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SavantIC |
SILICON POWER TRANSISTOR |
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Sanyo Semicon Device |
NPN Silicon Transistor |
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INCHANGE |
NPN Transistor |
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SavantIC |
SILICON POWER TRANSISTOR |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Type Silicon Transistor |
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SavantIC |
SILICON POWER TRANSISTOR |
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