2SC3457 INCHANGE NPN Transistor Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

2SC3457

INCHANGE
2SC3457
2SC3457 2SC3457
zoom Click to view a larger image
Part Number 2SC3457
Manufacturer INCHANGE
Description ·High Breakdown Voltage- : V(BR)CBO= 1100V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·De...
Features RBE= ∞ 800 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.5A; IB1= -IB2= 0.3A; L= 2mH; clamped 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 1100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE=0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 10 μA hFE-1 DC Current Gain IC= 0.2A; VCE= 5V 10 40 hFE-2 DC Current Gain IC= 1A; VCE= 5V 8 COB ...

Document Datasheet 2SC3457 Data Sheet
PDF 211.09KB
Distributor Stock Price Buy

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2SC3450
Sanyo Semicon Device
NPN Triple Diffused Planar Silicon Transistor Datasheet
2 2SC3450
INCHANGE
NPN Transistor Datasheet
3 2SC3451
Sanyo Semicon Device
NPN Triple Diffused Planar Silicon Transistor Datasheet
4 2SC3451
INCHANGE
NPN Transistor Datasheet
5 2SC3451
SavantIC
SILICON POWER TRANSISTOR Datasheet
6 2SC3456
Sanyo Semicon Device
NPN Triple Diffused Planar Silicon Transistor Datasheet
7 2SC3456
INCHANGE
NPN Transistor Datasheet
8 2SC3456
SavantIC
SILICON POWER TRANSISTOR Datasheet
9 2SC3457
Sanyo Semicon Device
NPN Silicon Transistor Datasheet
10 2SC3457
SavantIC
SILICON POWER TRANSISTOR Datasheet
More datasheet from INCHANGE
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad