2SC3451 |
Part Number | 2SC3451 |
Manufacturer | INCHANGE |
Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ... |
Features |
1mA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1m A; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 1.2A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1.2A; VCE= 5V
hFE-2
DC Current Gain
IC= 6A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 1.2A; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
Switching Times
ton
Turn-on Time
tstg
Storage ... |
Document |
2SC3451 Data Sheet
PDF 198.60KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC3450 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
2 | 2SC3450 |
INCHANGE |
NPN Transistor | |
3 | 2SC3451 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
4 | 2SC3451 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SC3456 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
6 | 2SC3456 |
INCHANGE |
NPN Transistor | |
7 | 2SC3456 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SC3457 |
Sanyo Semicon Device |
NPN Silicon Transistor | |
9 | 2SC3457 |
INCHANGE |
NPN Transistor | |
10 | 2SC3457 |
SavantIC |
SILICON POWER TRANSISTOR |