Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 2SK2611 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SK2611 |
| Manufacturer | WINSEMI SEMICONDUCTOR |
| Title | Silicon N-Channel MOSFET |
| Description | This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology. this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC power. |
| Features |
� � � � � 11A,500V,RDS(on)(Max0.55Ω)@VGS=10V Ultra-low Gate charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology. this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteris. |
| Part Number | 2SK2611 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·low on–resistance. ·High speed switching. ·No secondary breakdown. ·Suitable for switchingregulator, DC–DC c. |
| Features | L CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(TH) Gate Threshold Voltage VDS= 10V; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 4A IGSS Gate Source Leakage Current VGS= ±30V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=720V; VGS= 0 VSD Diode Forward Voltage IF= 9A; VGS=0 Gfs Forward Transco. |
| Part Number | 2SK2611 |
| Manufacturer | nELL |
| Title | N-Channel Power MOSFET |
| Description | The Nell 2SK2611 is a three-terminal silicon device with current conduction capability of 9A, fast switching speed, low on-state resistance, breakdown voltage rating of 900V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies, DC to . |
| Features | RDS(ON) = 1.10Ω @ VGS = 10V Ultra low gate charge(58nC typical) Low reverse transfer capacitance (CRSS = 45pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D (Drain) G (Gate) S (Source) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max. 9 900 1.10 @ VGS = 10V 58 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2610 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 2 | 2SK2613 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 3 | 2SK2614 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | 2SK2615 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 5 | 2SK2616 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 6 | 2SK2617ALS |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 7 | 2SK2617LS |
Sanyo Semicon Device |
N-Channl Silicon MOSFET |
|
| 8 | 2SK2618ALS |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 9 | 2SK2618LS |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 10 | 2SK260 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
Desde 2024. D4U Semiconductor.
|