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2SK2611 |
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| Part Number | 2SK2611 |
| Manufacturer | WINSEMI SEMICONDUCTOR |
| Description | This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology. this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche c... |
| Features |
� � � � � 11A,500V,RDS(on)(Max0.55Ω)@VGS=10V Ultra-low Gate charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology. this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC power Converters high voltage H-bridge motor drive PWM
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/... |
| Document |
 2SK2611 Data Sheet
PDF 538.17KB |
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