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| Part Number | 2SK1526 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SK1526 |
| Manufacturer | Renesas |
| Title | Silicon N-Channel MOSFET |
| Description | 2SK1526, 2SK1527 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline REJ03G0950-0200 (Previous: ADE-208-1290) Rev.2.00 Sep 07,. |
| Features |
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline REJ03G0950-0200 (Previous: ADE-208-1290) Rev.2.00 Sep 07, 2005 RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) D G 1. Gate 2. Drain 3. Source 1 2 3 S Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1526, 2SK1527 Absolute Maximum Ratings Item. |
| Part Number | 2SK1526 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | isc N-Channel MOSFET Transistor 2SK1526 ESCRIPTION ·Drain Current –ID=40A@ TC=25℃ ·Drain Source Voltage- : VDSS=450 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as sw. |
| Features | OL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA 450 V VGS(th) Gate Threshold Voltage VDS=10V; ID=1mA 2.0 3.0 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=20A 0.11 0.15 Ω IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 ±10 uA IDSS Zero Gate Voltage Drain Current VDS=360V; VGS= 0 250 uA VSD Diode Forward Voltage I. |
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| 9 | 2SK1527 |
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| 10 | 2SK1527 |
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Desde 2024. D4U Semiconductor.
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