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| Part Number | 2SK1520 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SK1520 |
| Manufacturer | Renesas |
| Title | Silicon N-Channel MOSFET |
| Description | 2SK1519, 2SK1520 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code: PRS. |
| Features |
• Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) G 1 23 REJ03G0948-0300 (Previous: ADE-208-1288) Rev.3.00 Apr 27, 2006 D 1. Gate 2. Drain 3. Source S Rev.3.00 Apr 27, 2006 page 1 of 6 2SK1519, 2SK1520 Abs. |
| Part Number | 2SK1520 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | isc N-Channel MOSFET Transistor 2SK1520 ESCRIPTION ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- : VDSS=500 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as sw. |
| Features | ETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=10V; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=15A IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=400V; VGS= 0 VSD Diode Forward Voltage IF=30A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=15A;R. |
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| 8 | 2SK1526 |
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Desde 2024. D4U Semiconductor.
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