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2SK15 |
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| Part Number | 2SK15 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | SILICON N CHANNEL JUNCTION TYPE (INDUSTRIAL APPLICATIONS) 2SK11 2SK12 2SK15 LOW FREQUENCY AMPLIFIER, HIGH INPUT IMPEDANCE CIRCUIT, CHOPPER AMPLIFIER, DIFFERENTIAL AMPLIFIER AND SWITCHING CIRCUIT APPLICATIONS. LOW NOISE AMPLIFIER APPLICATIONS (2SK15). FEATURES • Low Gate Leakage Current : I GSS =-1.0nA (Max.) (2SK11) : I GSS =-0.1nA (Max.) (2SK12, 2SK15) • . |
| Features |
• Low Gate Leakage Current : I GSS =-1.0nA (Max.) (2SK11) : I GSS =-0.1nA (Max.) (2SK12, 2SK15) • High Gain : l>'fsl=700 ^ 3200 US (2SK11) : |yfsl =800 % 3200 yS (2SK12, 2SK15) • Low Noise NF=3dB (Max.) at f=lkHz, R g=lMfi (2SK12) NF=3dB (Max.) at f =lkHz , Rg=10kfi (2SK15) NF=10dB (Max.) at f=120Hz, Rg=10kft (2SK15) Well Matched Pairs are Available. (Refer to page 3) Unit in mm 1. SOURCE 2. GATE 3. DRAIN 4. SHIELD TO-17 TC-4 , TB-6C Weight : 0.30g MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range . |
| Datasheet |
 2SK15 Data Sheet
PDF 394.89KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK1006 |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 2 | 2SK1006-01MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 3 | 2SK1007 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK1007-01 |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 5 | 2SK1008 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | 2SK1008-01 |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 7 | 2SK1009 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 8 | 2SK1010 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 9 | 2SK1010-01 |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET |
|
| 10 | 2SK1011 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
Desde 2024. D4U Semiconductor.
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