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2SK1009 |
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| Part Number | 2SK1009 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±30 V ID Drai. |
| Features | Voltage VDS= VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 3A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 450V; VGS= 0 VSD Forward On-Voltage IS=7A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=6A; RL=25Ω toff Turn-off time 2SK1009 MIN TYP. MAX UNIT 450 V 2.5 3.5 5.0 V 1.0 1.3 Ω ±100 nA 500 uA 1.1 1.5 V 50 80 ns 70 110 ns 50 80 ns 130 200 ns Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The inf. |
| Datasheet |
 2SK1009 Data Sheet
PDF 200.32KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK1006 |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 2 | 2SK1006-01MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 3 | 2SK1007 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK1007-01 |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 5 | 2SK1008 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | 2SK1008-01 |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 7 | 2SK1010 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 8 | 2SK1010-01 |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET |
|
| 9 | 2SK1011 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 10 | 2SK1011-01 |
Fuji Electric |
N-Channel Silicon Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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