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2SJ75 |
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| Part Number | 2SJ75 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | 2SJ75 SILICON P CHANNEL JUNCTION TYPE LOW NOISE AUDIO AMPLIFIER APPLICATIONS. DIFFERENTIAL AMPLIFIER APPLICATIONS. FEATURES • Recommended for first stages of EQ Amplifiers. • High ]y fs l : ly fs l=22mS(Typ.) • Excellent Pair Characteristics : | Vc-Sl " Vr-S2 = I 20mV (Max.) (Vds=-10V, lD=-lmA) • Low Noise : en = .95nV IViz (Typ.) (VDS = -10V, I. |
| Features |
• Recommended for first stages of EQ Amplifiers. • High ]y fs l : ly fs l=22mS(Typ.) • Excellent Pair Characteristics : | Vc-Sl " Vr-S2 = I 20mV (Max.) (Vds=-10V, lD=-lmA) • Low Noise : en = .95nV IViz (Typ.) (VDS = -10V, ID = -1mA, f = 1kHz) • High Input Impedance : Iqss = ^- n^ (Max.) (V G S=25V) • Complementary to 2SK240 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VGDS IG PD T.i Tstg RATING 25 -10 400 *2 125 -55^125 UNIT V mA mW °C °C 6.4MAX Unit : mm ^4 5 6„ 123 1. SO. |
| Datasheet |
 2SJ75 Data Sheet
PDF 135.37KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SJ72 |
Toshiba Semiconductor |
Silicon P-Channel Transistor |
|
| 2 | 2SJ73 |
Toshiba |
Silicon P-Channel Transistor |
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| 3 | 2SJ74 |
Toshiba Semiconductor |
Silicon P-Channel Transistor |
|
| 4 | 2SJ76 |
Hitachi Semiconductor |
Silicon P-Channel MOS FET |
|
| 5 | 2SJ76 |
Renesas Technology |
(2SJ76 - 2SJ79) Silicon P-Channel MOS FET |
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| 6 | 2SJ77 |
Hitachi Semiconductor |
Silicon P-Channel MOS FET |
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| 7 | 2SJ77 |
Renesas Technology |
(2SJ76 - 2SJ79) Silicon P-Channel MOS FET |
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| 8 | 2SJ78 |
Hitachi Semiconductor |
Silicon P-Channel MOS FET |
|
| 9 | 2SJ78 |
Renesas Technology |
(2SJ76 - 2SJ79) Silicon P-Channel MOS FET |
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| 10 | 2SJ79 |
Hitachi Semiconductor |
Silicon P-Channel MOS FET |
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Desde 2024. D4U Semiconductor.
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