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2SJ73 |
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| Part Number | 2SJ73 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | 2SJ73 SILICON P CHANNEL JUNCTION TYPE LOW NOISE AUDIO AMPLIFIER APPLICATIONS. DIFFERENTIAL AMPLIFIER APPLICATIONS- FEATURES • Recommended for first stages of EQ Amplifiers and M.C. Head Amplifiers. • High ]yf s | : lyfsl=40mS(Typ.) (VDS— 10V, VGS=0, I DSS =-5mA) • Excellent Pair Characteristics : |VGSl-VGS2l =2 0mV (Max.) — — (VDS 10V, I D 5mA) • Low. |
| Features |
• Recommended for first stages of EQ Amplifiers and M.C. Head Amplifiers. • High ]yf s | : lyfsl=40mS(Typ.) (VDS— 10V, VGS=0, I DSS =-5mA) • Excellent Pair Characteristics : |VGSl-VGS2l =2 0mV (Max.) — — (VDS 10V, I D 5mA) • Low Noise : NF=1.0dB (Typ.) (VDS=-10V, I D=-5mA, f=lkHz, Rg=100ft) • High Input Impedance : IcsS=lnA (Max. (V GS=25V) • Complementary to 2SK146 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VGDS IG PD Ti [stg. RATING 25 -10 600x2 125 -55^125 UNIT V mA mW Un. |
| Datasheet |
 2SJ73 Data Sheet
PDF 132.20KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SJ72 |
Toshiba Semiconductor |
Silicon P-Channel Transistor |
|
| 2 | 2SJ74 |
Toshiba Semiconductor |
Silicon P-Channel Transistor |
|
| 3 | 2SJ75 |
Toshiba |
Silicon P-Channel Transistor |
|
| 4 | 2SJ76 |
Hitachi Semiconductor |
Silicon P-Channel MOS FET |
|
| 5 | 2SJ76 |
Renesas Technology |
(2SJ76 - 2SJ79) Silicon P-Channel MOS FET |
|
| 6 | 2SJ77 |
Hitachi Semiconductor |
Silicon P-Channel MOS FET |
|
| 7 | 2SJ77 |
Renesas Technology |
(2SJ76 - 2SJ79) Silicon P-Channel MOS FET |
|
| 8 | 2SJ78 |
Hitachi Semiconductor |
Silicon P-Channel MOS FET |
|
| 9 | 2SJ78 |
Renesas Technology |
(2SJ76 - 2SJ79) Silicon P-Channel MOS FET |
|
| 10 | 2SJ79 |
Hitachi Semiconductor |
Silicon P-Channel MOS FET |
|
Desde 2024. D4U Semiconductor.
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