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2SD880 NPN Transistor Datasheet


2SD880

INCHANGE
2SD880
Part Number 2SD880
Manufacturer INCHANGE
Title CONN BRD STACK 2.00 60POS
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 3.0A ·Complement ...
Features or isc Silicon NPN Power Transistor 2SD880 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 7 V VCE(sat) ...

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DigiKey
Availability In Stock: 0
Price
1 units: 17.16 USD
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2SD880

Weitron
2SD880
Part Number 2SD880
Manufacturer Weitron
Title NPN Silicon Epitaxial Power Transistor
Description 2SD880 NPN Silicon Epitaxial Power Transistor P b Lead(Pb)-Free COLLECTOR 2 BASE 1 1 2 FEATURES: * Low frequency power amplifier * Complement to .
Features * Low frequency power amplifier * Complement to 2SB834 3 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER TO-220 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Conti.

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2SD880

SavantIC
2SD880
Part Number 2SD880
Manufacturer SavantIC
Title SILICON POWER TRANSISTOR
Description ·With TO-220C package ·Complement to type 2SB834 ·Low collector saturation voltage APPLICATIONS ·Designed for use in audio frequency power amplifi.
Features mitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=3A; IB=0.3A IC=0.5A ; VCE=5V VCB=60V; IE=0 VEB=7V; IC=0.

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2SD880

Toshiba
2SD880
Part Number 2SD880
Manufacturer Toshiba
Title Silicon NPN Transistor
Description SILICON NPN TRIPLE DIFFUSED TYPE 2SD880 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES : . High DC Current Gain : hEE =300(Max. )(VCE =5.
Features : . High DC Current Gain : hEE =300(Max. )(VCE =5V, Ic=0.5A) . Low Saturation Voltage : VCE ( sat )=1.0V(Max.)(IC=3A, Ifi=0.3A) . High Power Dissipation : PC =30W (Tc=25°C) ; Complementary to 2SB834. Unit in mm 10.3MAX. 03.6iO2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collecto.

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2SD880

UTC
2SD880
Part Number 2SD880
Manufacturer UTC
Title NPN Transistor
Description The UTC 2SD880 is designed for audio frequency power amplifier applications.  FEATURES * High DC Current Gain: hFE=200(Max.)(VCE=5V, IC=0.5A) * L.
Features * High DC Current Gain: hFE=200(Max.)(VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A) * Complementary to 2SB834  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free - 2SD880G-AB3-R 2SD880L-TA3-T 2SD880G-TA3-T Pin Assignment: B: Base C: Collector.

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2SD880

GME
2SD880
Part Number 2SD880
Manufacturer GME
Title NPN Epitaxial Silicon Transistor
Description NPN Epitaxial Silicon Transistor FEATURES  Low frequency power amplifier.  Complememt to 2SB834. Pb Lead-free Production specification 2SD880.
Features
 Low frequency power amplifier.
 Complememt to 2SB834. Pb Lead-free Production specification 2SD880 TO-220AB TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO VEBO IC PC Tj,Tstg Coll.

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