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2SD880 |
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| Part Number | 2SD880 |
| Manufacturer | GME |
| Description | NPN Epitaxial Silicon Transistor FEATURES Low frequency power amplifier. Complememt to 2SB834. Pb Lead-free Production specification 2SD880 TO-220AB TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Vol. |
| Features |
Low frequency power amplifier. Complememt to 2SB834. Pb Lead-free Production specification 2SD880 TO-220AB TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction and Storage Temperature Continuous 60 V 7V 3A 1.5 W -55 to +150 ℃ X082 Rev.A www.gmesemi.com 1 Production specification NPN Epitaxial Silicon Transistor 2SD880 ELECTRICAL CHARACTERISTICS Ratings at 25. |
| Datasheet |
 2SD880 Data Sheet
PDF 371.50KB |
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2SD880 |
| Part Number | 2SD880 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220C package ·Complement to type 2SB834 ·Low collector saturation voltage APPLICATIONS ·Designed for use in audio frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC. |
| Features | mitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=3A; IB=0.3A IC=0.5A ; VCE=5V VCB=60V; IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=5V IC=0.5A ; VCE=5V;f=1MHz 60 3 MIN 60 7 www.datasheet4u.com 2SD880 SYMBOL V(BR)CEO. |
2SD880 |
| Part Number | 2SD880 |
| Manufacturer | TGS |
| Title | Transistor |
| Description | It is intented for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature Symbol VCBO VCEO VEBO . |
| Features | t http://www.datasheet4u.com/ . |
2SD880 |
| Part Number | 2SD880 |
| Manufacturer | UTC |
| Title | NPN Transistor |
| Description | The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURES * High DC Current Gain: hFE=200(Max.)(VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A) * Complementary to 2SB834 ORDERING INFORMATION Note: Ordering Number Lead Free Halogen F. |
| Features | * High DC Current Gain: hFE=200(Max.)(VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A) * Complementary to 2SB834 ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free - 2SD880G-AB3-R 2SD880L-TA3-T 2SD880G-TA3-T Pin Assignment: B: Base C: Collector E: Emitter Package SOT-89 TO-220 Pin Assignment 123 BCE BCE Packing Tube Tube MARKING SOT-89. |
2SD880 |
| Part Number | 2SD880 |
| Manufacturer | Weitron |
| Title | NPN Silicon Epitaxial Power Transistor |
| Description | 2SD880 NPN Silicon Epitaxial Power Transistor P b Lead(Pb)-Free COLLECTOR 2 BASE 1 1 2 FEATURES: * Low frequency power amplifier * Complement to 2SB834 3 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER TO-220 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Paramet. |
| Features | * Low frequency power amplifier * Complement to 2SB834 3 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER TO-220 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 60 60 7 3 1.5 150 -. |
2SD880 |
| Part Number | 2SD880 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 3.0A ·Complement to Type 2SB834 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio frequency powe. |
| Features | or isc Silicon NPN Power Transistor 2SD880 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3.0A; IB= 0.3A 1.0 V VBE(on) Base-Emitter On Voltage IC. |
2SD880 |
| Part Number | 2SD880 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | SILICON NPN TRIPLE DIFFUSED TYPE 2SD880 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES : . High DC Current Gain : hEE =300(Max. )(VCE =5V, Ic=0.5A) . Low Saturation Voltage : VCE ( sat )=1.0V(Max.)(IC=3A, Ifi=0.3A) . High Power Dissipation : PC =30W (Tc=25°C) ; Complementary to 2SB834. Un. |
| Features | : . High DC Current Gain : hEE =300(Max. )(VCE =5V, Ic=0.5A) . Low Saturation Voltage : VCE ( sat )=1.0V(Max.)(IC=3A, Ifi=0.3A) . High Power Dissipation : PC =30W (Tc=25°C) ; Complementary to 2SB834. Unit in mm 10.3MAX. 03.6iO2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage v CBO 60 Collector-Emitter Voltage Emitter-Base Voltage v CEO 60 v EBO Collect. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD880-GR |
MCC |
NPN Silicon Power Transistors |
|
| 2 | 2SD880-Q |
MCC |
NPN Silicon Power Transistors |
|
| 3 | 2SD880-Y |
MCC |
NPN Silicon Power Transistors |
|
| 4 | 2SD880G |
UTC |
NPN Transistor |
|
| 5 | 2SD880Y |
USHA |
SILICON PLASTIC POWER TRANSISTOR |
|
| 6 | 2SD882 |
NEC |
NPN Silicon Power Transistor |
|
| 7 | 2SD882 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD882 |
ST Microelectronics |
NPN MEDIUM POWER TRANSISTOR |
|
| 9 | 2SD882 |
UTC |
MEDIUM POWER LOW VOLTAGE TRANSISTOR |
|
| 10 | 2SD882 |
JILIN SINO |
NPN EPITAXIAL SILICON TRANSISTOR |
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Desde 2024. D4U Semiconductor.
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