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2SD880 |
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| Part Number | 2SD880 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 3.0A ·Complement to Type 2SB834 ·Minimum Lot-to-Lot variations for robu... |
| Features |
or
isc Silicon NPN Power Transistor
2SD880
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
60
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
7
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3.0A; IB= 0.3A
1.0
V
VBE(on) Base-Emitter On Voltage
IC= 0.5A ; VCE= 5V
1.0
V
ICBO
Collector Cutoff Current
VCB= 60V ; IE= 0
100 μA
IEBO
Emitter Cutoff Current
VEB= 7V ; IC= 0
100 μA
hFE
DC Current Gain
IC= 0.5A ; VCE= 5V
60
300
fT
Curren... |
| Document |
 2SD880 Data Sheet
PDF 218.41KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD880 |
GME |
NPN Epitaxial Silicon Transistor |
|
| 2 | 2SD880 |
UTC |
NPN Transistor |
|
| 3 | 2SD880 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SD880 |
Weitron |
NPN Silicon Epitaxial Power Transistor |
|
| 5 | 2SD880 |
TGS |
Transistor |
|
| 6 | 2SD880 |
Toshiba |
Silicon NPN Transistor |
|
| 7 | 2SD880-GR |
MCC |
NPN Silicon Power Transistors |
|
| 8 | 2SD880-Q |
MCC |
NPN Silicon Power Transistors |
|
| 9 | 2SD880-Y |
MCC |
NPN Silicon Power Transistors |
|
| 10 | 2SD880G |
UTC |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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