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2SD845 NPN Silicon Power Transistors Datasheet


2SD845

MCC
2SD845
Part Number 2SD845
Manufacturer MCC
Title CONN BRD STACK 2.00 10POS
Description MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • With TO-3P(I) ...
Features
• With TO-3P(I) package
• Recommended for 60~80W high-fidelity frequency amplifier output stage Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Stora...

Document Datasheet 2SD845 datasheet pdf (71.79KB)
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DigiKey
Availability In Stock: 0
Price
1 units: 4.13 USD
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2SD845

SavantIC
2SD845
Part Number 2SD845
Manufacturer SavantIC
Title SILICON POWER TRANSISTOR
Description ·With MT-200 package ·Complement to type 2SB755 ·High transition frequency ·High breakdown voltage :VCEO=150V(min) APPLICATIONS ·For power amplif.
Features tter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.1A; IB=0 IE=10mA; IC=0 IC=5 A;IB=0.5 A IC=5A ; VCE=5V VCB=150V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=1A ; VCE=10V 55 20 MIN 150 5 TYP. www.datasheet4u.

Document 2SD845 datasheet pdf


2SD845

INCHANGE
2SD845
Part Number 2SD845
Manufacturer INCHANGE
Title NPN Transistor
Description ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 150V(Min) ·Good Linearity of hFE ·Complement to Type 2SB755 ·Minimum Lot-to-Lot variations for rob.
Features IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 5A; VCE= 5V ICBO Collector Cutoff Current VCB= 150V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; f.

Document 2SD845 datasheet pdf


2SD845

Toshiba
2SD845
Part Number 2SD845
Manufacturer Toshiba
Title Silicon NPN Transistor
Description : 2SD845 I SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATION, FEATURES • High Breakdoun Voltage : Vceo=150V (Min.) • High Transition .
Features
• High Breakdoun Voltage : Vceo=150V (Min.)
• High Transition Frequency : fx=20MHz (Typ.)
• Complementary to 2SB755.
• Recommended for 8011 High-Fidelity Audio Frequency Amplifier Output Stage. 34.3MAX Unit in mm MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Vo.

Document 2SD845 datasheet pdf



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