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2SD845 |
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| Part Number | 2SD845 |
| Manufacturer | SavantIC |
| Description | ·With MT-200 package ·Complement to type 2SB755 ·High transition frequency ·High breakdown voltage :VCEO=150V(min) APPLICATIONS ·For power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC I. |
| Features | tter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.1A; IB=0 IE=10mA; IC=0 IC=5 A;IB=0.5 A IC=5A ; VCE=5V VCB=150V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=1A ; VCE=10V 55 20 MIN 150 5 TYP. www.datasheet4u.com 2SD845 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE fT MAX UNIT V V 2.0 1.5 -50 -50 160 V V µA µA MHz hFE classifications R 55-110 O 80-160 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com 2SD845 Fig.2 Outline di. |
| Datasheet |
 2SD845 Data Sheet
PDF 152.63KB |
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2SD845 |
| Part Number | 2SD845 |
| Manufacturer | MCC |
| Title | NPN Silicon Power Transistors |
| Description | MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features • With TO-3P(I) package • Recommended for 60~80W high-fidelity frequency amplifier output stage Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating Collector-Em. |
| Features |
• With TO-3P(I) package • Recommended for 60~80W high-fidelity frequency amplifier output stage Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 150 150 5.0 12 120 -55 to +150 -55 to +150 Unit V V V A W OC OC 2SD845 NPN . |
2SD845 |
| Part Number | 2SD845 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 150V(Min) ·Good Linearity of hFE ·Complement to Type 2SB755 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE. |
| Features | IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 5A; VCE= 5V ICBO Collector Cutoff Current VCB= 150V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V hFE Classifications R O 55-. |
2SD845 |
| Part Number | 2SD845 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | : 2SD845 I SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATION, FEATURES • High Breakdoun Voltage : Vceo=150V (Min.) • High Transition Frequency : fx=20MHz (Typ.) • Complementary to 2SB755. • Recommended for 8011 High-Fidelity Audio Frequency Amplifier Output Stage. 34.3MAX Unit in mm . |
| Features |
• High Breakdoun Voltage : Vceo=150V (Min.) • High Transition Frequency : fx=20MHz (Typ.) • Complementary to 2SB755. • Recommended for 8011 High-Fidelity Audio Frequency Amplifier Output Stage. 34.3MAX Unit in mm MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) J. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD841 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD841 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SD841 |
Toshiba |
Silicon NPN Transistor |
|
| 4 | 2SD842 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SD843 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD843 |
Toshiba |
Silicon NPN Transistor |
|
| 7 | 2SD844 |
Toshiba |
NPN Transistor |
|
| 8 | 2SD844 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SD844 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SD847 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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