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2SD841 |
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| Part Number | 2SD841 |
| Manufacturer | INCHANGE |
| Description | ·High Collector-Base Breakdown Voltage : V(BR)CBO= 800V(Min.) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.)@ IC= 0.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT . |
| Features | Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 0.5A; IB= 50mA ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE-1 DC Current Gain IC= 10mA; VCE= 5V hFE-2 DC Gurrent Gain IC= 0.5A; VCE= 5V fT Current-Gain—Bandwidth Product IE= 0.1A; VCE= 10V COB Output Capacitance tf Fall Time IE= 0; VCB= 10V; ftest= 1.0MHz IC= 0.5A; IB1= IB2= 50mA; RL= 400Ω; VCC≈ 200V MIN TYP. MAX UNIT 400 V 1.0 V 1.5 V 1.0 mA 1.0 mA 8 10 4 MHz 75 pF . |
| Datasheet |
 2SD841 Data Sheet
PDF 204.27KB |
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2SD841 |
| Part Number | 2SD841 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220 package ·Low collector saturation voltage ·High speed switching ·High voltage:VCBO=800V(Min) APPLICATIONS ·High voltage switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base vol. |
| Features | t gain DC current gain Transition frequency Output capacitance Fall time CONDITIONS IC=10mA , IB=0 IC=0.5A; IB=50mA IC=0.5A; IB=50mA VCB=800V; IE=0 VEB=5V; IC=0 IC=10mA ; VCE=5V IC=0.5A ; VCE=5V IE=-0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IC=0.5A; IB1=-IB2=50mA VCC=200V; RL=400@ 8 10 4 75 MIN 400 TYP. www.datasheet4u.com 2SD841 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB tf MAX UNI. |
2SD841 |
| Part Number | 2SD841 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | 21 I I SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD841 HIGH VOLTAGE SWITCHING APPLICATIONS- FEATURES: . High Voltage : VCB0=800V . Low VcE(sat) : VCE ( sat )=l .OV(Max. ) ( C =0. 5A. B =0.05A) . High Speed Switching : tf=1.0/is (Max.) . Glass Passivated Collector-Base Junction. Unit in mm 10.3MAX.. |
| Features | . High Voltage : VCB0=800V . Low VcE(sat) : VCE ( sat )=l .OV(Max. ) ( C =0. 5A. B =0.05A) . High Speed Switching : tf=1.0/is (Max.) . Glass Passivated Collector-Base Junction. Unit in mm 10.3MAX. 03.6±O.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO 800 V 400 V 2.5 4 X 2.5 4 Emitter-Base Voltage Collector Curr. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD842 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD843 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD843 |
Toshiba |
Silicon NPN Transistor |
|
| 4 | 2SD844 |
Toshiba |
NPN Transistor |
|
| 5 | 2SD844 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SD844 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SD845 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD845 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SD845 |
Toshiba |
Silicon NPN Transistor |
|
| 10 | 2SD845 |
MCC |
NPN Silicon Power Transistors |
|
Desde 2024. D4U Semiconductor.
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