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2SD688 Silicon NPN Transistor Datasheet


2SD688

Toshiba
2SD688
Part Number 2SD688
Manufacturer Toshiba (https://www.toshiba.com/)
Title CONN BRD STACK .100" 6POS
Description : SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) LOW FREQUENCY MEDIUM POWER AMPLIFIER AND MEDIUM SPEED SWITCHING APPLICATIONS. PULS...
Features
• High DC Current Gain : h FE=1000 (Min.) (VCE=2V, I C=1A)
• Low Saturation Voltage : vCE(sat)=l-5V (Max.) (I C=1A)
• Complementary to 2SB678 Unit in mm .09.39MAX. j2fe.45MAX. j2fo.45 a 05.08 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter...

Document Datasheet 2SD688 datasheet pdf (40.95KB)
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DigiKey
Stock 0 In Stock
Price
1 units: 1.91 USD
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2SD689

Toshiba
2SD689
Part Number 2SD689
Manufacturer Toshiba
Title NPN Transistor
Description SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) LOW FREQUENCY MEDIUM POWER AMPLIFIER AND INDUSTRIAL APPLICATIONS Unit in mm MEDIUM .
Features . High DC Current Gain : h FE =1000 (Min. ) (VCE =2V, I C =1A) . Low Saturation Voltage : VcE(sat) = l .5V(Max. ) (Ic=lA) . Complementary to 2SB679. x.T 1.5MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Curr.

Document 2SD689 datasheet pdf


2SD689

INCHANGE
2SD689
Part Number 2SD689
Manufacturer INCHANGE
Title Silicon NPN Darlington Power Transistor
Description ·High DC Current Gain- : hFE = 1000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation .
Features RISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A ,IB= 2mA VBE(sat) Base-Emitter Saturation Voltage IC.

Document 2SD689 datasheet pdf


2SD687

Toshiba
2SD687
Part Number 2SD687
Manufacturer Toshiba
Title Silicon NPN Transistor
Description 2SD687 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER A.
Features : . High DC Current Gain : hFE=2000(Min.)(VCE=2V, Ic=lA) . Low Saturation Voltage : VCE(sat) =1.5V(Max.)(I c =2A) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Collector Power Dissipation (Tc=25°C) Junctio.

Document 2SD687 datasheet pdf


2SD687

INCHANGE
2SD687
Part Number 2SD687
Manufacturer INCHANGE
Title NPN Transistor
Description ·High DC Current Gain- : hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 40V(Min) ·Low Collector-Emitter Saturation Vol.
Features V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A,IB= 4mA VBE(sat)) Base-Emitter Saturation Voltage IC= 2A,IB= 4mA ICBO Collector Cutoff Current VCB= 60V, IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Ga.

Document 2SD687 datasheet pdf



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