Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SD5075 |
| Part Number | 2SD5075 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE U. |
| Features | IB= 0.8A 8.0 V VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 2.5A; IB= 0.8A VCB= 800V; IE= 0 1.5 V 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE DC Current Gain IC= 0.5A; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V tf Fall Time IC= 3A, IB1= 0.8A; IB2= -1.6A; RL= 66.7Ω;VCC= 200V 3 MHz 0.4 μs NOTICE： ISC reserv. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD5070 |
Inchange Semiconductor |
Power Transistor |
|
| 2 | 2SD5071 |
SavantIC |
Silicon NPN Power Transistors |
|
| 3 | 2SD5071 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 4 | 2SD5072 |
Fairchild |
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR |
|
| 5 | 2SD5072 |
Savantic |
Silicon NPN Power Transistors |
|
| 6 | 2SD5072 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 7 | 2SD5074 |
Inchange Semiconductor |
Power Transistor |
|
| 8 | 2SD5075T |
Savantic |
Silicon NPN Power Transistors |
|
| 9 | 2SD5075T |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 10 | 2SD5076 |
Savantic |
Silicon NPN Power Transistors |
|
Desde 2024. D4U Semiconductor.
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