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2SD5075 |
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| Part Number | 2SD5075 |
| Manufacturer | INCHANGE |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for col... |
| Features |
IB= 0.8A
8.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= 2.5A; IB= 0.8A VCB= 800V; IE= 0
1.5
V
10
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0 mA
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
8
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V
tf
Fall Time
IC= 3A, IB1= 0.8A; IB2= -1.6A; RL= 66.7Ω;VCC= 200V
3
MHz
0.4
μs
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ... |
| Document |
 2SD5075 Data Sheet
PDF 184.66KB |
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