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2SD2636 Silicon NPN Triple Diffused Type Transistor Datasheet


2SD2636

Toshiba
2SD2636

Part Number 2SD2636
Manufacturer Toshiba (https://www.toshiba.com/)
Description 2SD2636 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2636 Power Amplifier Applications High-Power Switchi...
Features thin the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent...

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2SD2639

Sanyo Semicon Device
2SD2639
Part Number 2SD2639
Manufacturer Sanyo Semicon Device
Title NPN Triple Diffused Planar Silicon Transistor
Description Ordering number : ENN6960 2SB1683 / 2SD2639 2SB1683 : PNP Epitaxial Planar Silicon Transistor 2SD2639 : NPN Triple Diffused Planar Silicon Trans.
Features

• Package Dimensions unit : mm 2010C [2SB1683 / 2SD2639] 10.2 3.6 5.1 2.7 6.3 4.5 Wide ASO because of on-chip ballast resistance. Good dependence of fT on current and good HF characteristic. 1.3 18.0 5.6 1.2 14.0 0.8 15.1 0.4 1 2 3 2.7 Specifications ( ) : 2SB1683 Absolute Maximum Rating.

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2SD2638

Toshiba Semiconductor
2SD2638
Part Number 2SD2638
Manufacturer Toshiba Semiconductor
Title Silicon NPN Transistor
Description 2SD2638 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SD2638 Horizontal Deflection Output for Color TV, Digital TV. High Speed Switch.
Features sition frequency Collector output capacitance Switching time Storage time Fall time Symbol ICBO IEBO V (BR) EBO hFE (1) hFE (2) VCE (sat) VBE (sat) VF fT Cob tstg tf Test Condition VCB = 1700 V, IE = 0 VEB = 5 V, IC = 0 IE = 400 mA, IC = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 5.5 A IC = 5.5 A, IB = 1.

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2SD2635

Sanyo Semicon Device
2SD2635
Part Number 2SD2635
Manufacturer Sanyo Semicon Device
Title NPN Transistor
Description Ordering number:ENN6449 NPN Epitaxial Planar Silicon Darlington Transistor 2SD2635 120V / 2A Driver Applications Applications · Motor drivers, h.
Features
· Darlington connection
· High DC current gain.
· DC current gain is less affected by temperature. 4.5 1.0 0.6 1.0 0.9 1 2 3 0.5 0.45 2.54 2.54 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Base Sustain Voltag.

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2SD2634

INCHANGE
2SD2634
Part Number 2SD2634
Manufacturer INCHANGE
Title NPN Transistor
Description ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for rob.
Features tter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 ICES Collector Cutoff Current VCE= 1500V ; RBE= 0 IEBO Emitter Cutoff Curren.

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