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2SD2636 |
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| Part Number | 2SD2636 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | 2SD2636 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2636 Power Amplifier Applications High-Power Switching Applications • • High-breakdown voltage: VCEO = 160... |
| Features |
thin the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 30 Ω
Emitter
1
2006-11-21
http://www.Datasheet4U.com
2SD2636
Electrical Characteristics (Tc = 25°C)
Characteristic Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter v... |
| Document |
 2SD2636 Data Sheet
PDF 314.83KB |
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