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| Part Number | 2SD2558 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD2558 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High DC Current Gain- : hFE= 1500( Min.) @(IC= 1A, VCE= 5V) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 1A, IB= 5mA) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Desi. |
| Features | ITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A ,IB= 5mA ICBO Collector Cutoff current VCB= 200V, IE= 0 IEBO Emitter Cutoff current VEB= 6V, IC= 0 hFE DC Current Gain IC= 1A; VCE= 5V COB Output Capacitance fT Current-Gain—Bandwidth Product IE= 0; VCB= 10V; ftest= 1MHz IE= -0.5A; VCE= 10V 2SD2558 MIN TYP. MAX. |
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Desde 2024. D4U Semiconductor.
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