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| Part Number | 2SD2553 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD2553 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3P(H)IS package ·High voltage;high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for high resolution display,color TV ·High speed switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol. |
| Features | ase breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage Collector output capacitance Transition frequency CONDITIONS IC=400mA ;IB=0 IC=6A; IB=1.2A IC=6A; IB=1.2A VCB=1200V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V IF=8A IE=0 ; VCB=10V,f=1MHz IC=0.1A ; VC. |
| Part Number | 2SD2553 |
| Manufacturer | TGS |
| Title | SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR |
| Description | HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS Product specification 2SD2553 ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Total . |
| Features | 0 9 Max. 1.0 200 — 28 9 5.0 1.2 2.0 — — 12 V V V pF MHz us Unit mA mA V O ICBO IEBO hFE(1) hFE(2) VBE(sat) VF V(BR) EBO IC=10mA, IB=0 VCE=5.0V, IC=1.0A VCE=5.0V, IC=6.0A VCE(sat) IC=6.0A,IB=1.2A IC=6.0A,IB=1.2A IF=8.0A VCB=10V,f=1.0MHz, IE=0 VCE=10V,IC=100mA ICP= 6.0 A, IB1 (end)=1.5 A fH = 15.75 kHz Cob fT tstg Free Datasheet http://www.Datasheet4U.com . |
| Part Number | 2SD2553 |
| Manufacturer | Toshiba Semiconductor |
| Title | NPN Transistor |
| Description | 2SD2553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2553 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS z High Voltage z Low Saturation Voltage z High Speed z Built-in Damper Type z Collector Metal (Fin) is Fully Covered with Mol. |
| Features | ven if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). EQUIVALENT CIRCUIT M. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD2550 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD2550 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SD2551 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SD2551 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SD2556 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SD2557 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SD2557 |
Sanken electric |
Silicon NPN Transistor |
|
| 8 | 2SD2557 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SD2558 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SD2558 |
Sanken electric |
Silicon NPN Transistor |
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Desde 2024. D4U Semiconductor.
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