2SD2331 Datasheet. existencias, precio

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2SD2331 SILICON POWER TRANSISTOR


2SD2331
Part Number 2SD2331
Distributor Stock Price Buy
INCHANGE
2SD2331
Part Number 2SD2331
Manufacturer INCHANGE
Title NPN Transistor
Description ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAME.
Features BE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC=1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 MIN TYP. MAX UNIT 600 V 1500 V 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A ICBO Collector Cutoff Current VCB= 1000V ; IE= 0 IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 1.5 V 2.0.

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