2SD2331 INCHANGE NPN Transistor Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

2SD2331

INCHANGE
2SD2331
2SD2331 2SD2331
zoom Click to view a larger image
Part Number 2SD2331
Manufacturer INCHANGE
Description ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT...
Features BE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC=1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 MIN TYP. MAX UNIT 600 V 1500 V 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A ICBO Collector Cutoff Current VCB= 1000V ; IE= 0 IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 1.5 V 2.0 V 10 μA 40 130 mA hFE DC Current Gain IC= 1A ; VCE= 5V 8 30 VECF C-E Diode Forward Voltage tf Fall Time IF= 2.0A IC= 3A , IB1= 0.8A ; IB2= 1.6A RL= 66.7Ω; VCC= 200V 2.0 V 0.7 μs NOT...

Document Datasheet 2SD2331 Data Sheet
PDF 185.66KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2SD2331
SavantIC
SILICON POWER TRANSISTOR Datasheet
2 2SD2333
SavantIC
Silicon NPN Power Transistor Datasheet
3 2SD2333
INCHANGE
NPN Transistor Datasheet
4 2SD2335
SavantIC
SILICON POWER TRANSISTOR Datasheet
5 2SD2335
INCHANGE
NPN Transistor Datasheet
6 2SD2337
Hitachi Semiconductor
Silicon NPN Transistor Datasheet
More datasheet from INCHANGE
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad