Part Number | 2SD2105 |
Distributor | Stock | Price | Buy |
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Part Number | 2SD2105 |
Manufacturer | INCHANGE |
Title | Silicon NPN Darlington Power Transistor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 5A ·High DC Current Gain : hFE= 1000(Min) @ IC= 5A, VCE= 3V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for lo. |
Features | fied SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 100mA VBE(sat)-1 Base-Emitter Saturation Voltage IC=. |
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