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| Part Number | 2SD2101 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD2101 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220Fa package ·DARLINGTON APPLICATIONS ·Low frequency power amplifier PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector -emitter voltag. |
| Features | tter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain CONDITIONS IE=50mA; IC=0 IC=0.1mA; IC=0 IC=25mA;RBE=; IC=5A; L=5mH IC=5A ;IB=10mA IC=10A ;IB=100mA IC=5A ;IB=10mA IC=10A ;IB=100mA VCB=180V; IE=0 VCE=180V; RBE=; IC=5A ; VCE=3V 1500 MIN 7 200 200 170 1.5 3.0. |
| Part Number | 2SD2101 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 5A ·High DC Current Gain : hFE= 1500(Min) @ IC= 5A, VCE= 3V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for lo. |
| Features | ified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; RBE= ∞ V(SUS)CEO Collector-Emitter Sustaining Voltage IC= 50mA; L= 5mH V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC. |
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