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| Part Number | 2SD198 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD198 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Excellent Safe Operating Area ·Fast Switching Speed ·With TO-3 Package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Voltage regulator. ·Switching mode power . |
| Features | CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A ICBO Collector Cutoff Current VCB= 300V; IE= 0 ICEO Collector Cutoff Current VCE= . |
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Desde 2024. D4U Semiconductor.
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