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| Part Number | 2SD1898 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD1898 |
| Manufacturer | UTC |
| Title | POWER TRANSISTOR |
| Description | , at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R208-030.H . |
| Features | *High VCEO= 80V *High IC= 1A (DC) *Good hFE linearity *Low VCE(SAT) *Complements the 2SB1260 1 SOT-223 3 2 1 SOT-23 (EIAJ SC-59) 1 SOT-89 3 2 1 SOT-23-3 (JEDEC TO-236) ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1898L-x-AA3-R 2SD1898G-x-AA3-R 2SD1898L-x-AB3-R 2SD1898G-x-AB3-R 2SD1898L-x-AE2-R 2SD1898G-x-AE2-R 2SD1898L-x-AE3-R 2SD1898G-x-AE3-R Note: Pin Assignmen. |
| Part Number | 2SD1898 |
| Manufacturer | WEJ |
| Title | NPN Transistor |
| Description | RoHS 2SD1898 2SD1898 TRANSISTOR (NPN) SOT-89 FEATURES z High VCEO z High IC z Good hFE linearity z Low VCE (sat) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltag. |
| Features | z High VCEO z High IC z Good hFE linearity z Low VCE (sat) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 100 80 5 1 500 150 -55-150 . |
| Part Number | 2SD1898 |
| Manufacturer | WILLAS |
| Title | Plastic-Encapsulate Transistors |
| Description | WILLAS SOT-89 Plastic-Encapsulate Transistors 2SD1898 TRANSISTOR (NPN) FEATURES z High Breakdown Voltage and Current z Excellent DC Current Gain Linearity z Pb-Free package is available RoHS product for packing code suffix ”G” Halogen free product for packing code suffix “H” z Low Collector-Emitt. |
| Features | z High Breakdown Voltage and Current z Excellent DC Current Gain Linearity z Pb-Free package is available RoHS product for packing code suffix ”G” Halogen free product for packing code suffix “H” z Low Collector-Emitter Saturation Voltage MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Ba. |
| Part Number | 2SD1898 |
| Manufacturer | Kexin |
| Title | Power Transistor |
| Description | SMD Type Power Transistor 2SD1898 Transistors Features High VCEO, VCEO=80V . High IC, IC=1A (DC) . Good hFE linearity . Low VCE (sat) . Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation J. |
| Features | High VCEO, VCEO=80V . High IC, IC=1A (DC) . Good hFE linearity . Low VCE (sat) . Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature *1. Pw=20ms. *2. 40X40X0.7mm Ceramic board. Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collec. |
| Part Number | 2SD1898 |
| Manufacturer | GME |
| Title | Power Transistor |
| Description | Production specification Power Transistor(80V,1A) FEATURES High VCEO,VCEO=80V. High IC,IC=1A(DC). Good HFE Linearity. Low VCE(sat). Complement the 2SB1260. Pb Lead-free 2SD1898 APPLICATIONS NPN silicon transistor. ORDERING INFORMATION Type No. Marking 2SD1898 DF SOT-89 Package . |
| Features |
High VCEO,VCEO=80V. High IC,IC=1A(DC). Good HFE Linearity. Low VCE(sat). Complement the 2SB1260. Pb Lead-free 2SD1898 APPLICATIONS NPN silicon transistor. ORDERING INFORMATION Type No. Marking 2SD1898 DF SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter V. |
| Part Number | 2SD1898 |
| Manufacturer | Rohm |
| Title | Power Transistor |
| Description | 2SD1898 / 2SD1733 NPN 1.0A 80V Middle Power Transistor Parameter VCEO IC Value 80V 1.0A lOutline MPT3 Base Collector Emitter lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1260 / 2SB1181 3) Low VCE(sat) VCE(sat)= 0.4V Max. (IC/IB=500mA/20mA) 4) Lead Free/RoHS Compl. |
| Features |
1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1260 / 2SB1181 3) Low VCE(sat)
VCE(sat)= 0.4V Max. (IC/IB=500mA/20mA)
4) Lead Free/RoHS Compliant.
2SD1898 (SC-62) |
| Part Number | 2SD1898 |
| Manufacturer | Weitron Technology |
| Title | Epitaxial Planar NPN Transistors |
| Description | 2SD1898 Epitaxial Planar NPN Transistors SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature, Storage Temperature * Single pu. |
| Features | eter Symbol DC Current Gain (VCE=3V, Ic=500mA) Collector-Emitter Saturation Voltage (Ic=500mA, IB =20mA) Transition Frequency (VCE=10V, Ic=50mA, f=100MHz) Output Capacitance (VCB=10V, I E =0A, f=1MHz) h FE V CE(sat) fT Cob 82 - 390 0.4 - - V MHz pF 100 20 CLASSIFICATION OF hFE Marking Rank Range P 82-180 DF Q 120-270 R 180-390 ELECTRICAL CHARACTERISTIC CURVES 1000 T a=25 °C C OLLE C TOR C U. |
| Part Number | 2SD1898 |
| Manufacturer | SeCoS |
| Title | NPN Epitaxial Planar Silicon Transistor |
| Description | Elektronische Bauelemente 2SD1898 1A , 100V NPN Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE High Breakdown Voltage and Current Excellent DC Current Gain Linearity Low Collector-Emitter Saturation Voltage CLASSIFICATION OF hFE Product . |
| Features | High Breakdown Voltage and Current Excellent DC Current Gain Linearity Low Collector-Emitter Saturation Voltage CLASSIFICATION OF hFE Product Rank 2SD1898-P Range 82~180 Marking 2SD1898-Q 120~270 DF 2SD1898-R 180~390 PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7’ inch SOT-89 123 A EC 4 B F G H J D K L 1. Base 2. Collector 3. Emitter REF. A B C D E F Millimeter Min. Ma. |
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Desde 2024. D4U Semiconductor.
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