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| Part Number | 2SD1892 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD1892 |
| Manufacturer | Panasonic Semiconductor |
| Title | Silicon NPN Transistor |
| Description | Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1252 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 7.5±0.2 s Features q q q q 0.7±0.1 4.2±0.2 Unit: mm 14.0±0.5 Optimum for 35W HiFi output High foward current transfer ratio hFE: 500. |
| Features |
q q q q
0.7±0.1
4.2±0.2
Unit: mm
14.0±0.5
Optimum for 35W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 120 100 5 8 5 45 2 150 –55 to +150 Unit V V V A A W 16.7±0.3 φ3.1±0.1 4.0 1.4±0.1 1.3±0.2 Solder Dip s Absolute M. |
| Part Number | 2SD1892 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2SB1252 APPLICATIONS ·Power amplification ·Optimum for 35W high-fidelity output PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute. |
| Features | Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=30mA ; IB=0 IC=4A ;IB=4mA IC=4A ;IB=4mA VCB=120V; IE=0 VCE=100V; IB=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V IC=0.5A ; VCE=10V;f=1MHz 2000 5000 MIN 100 www.datasheet4u.com 2SD1892 SYMBOL V(BR)CEO VCEsat VBEsat ICBO ICEO. |
| Part Number | 2SD1892 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 5000(Min) @IC= 4A ·Low Collector Saturation Voltgae- : VCE(sat)= 2.5V(Max.)@ IC= 4A ·Complement to Type 2SB1252 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·. |
| Features | ERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 4mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 4mA ICBO Collector Cutoff Current VCB= 120V; IE= 0 ICEO Collector Cutoff current . |
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| 8 | 2SD1894 |
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| 9 | 2SD1894 |
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Desde 2024. D4U Semiconductor.
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