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| Part Number | 2SD1856 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD1856 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High DC Current Gain : hFE= 2000(Min) @IC= 2A ·Low Collector Saturation Voltgae- : VCE(sat)= 1.5V(Max.)@ IC= 2A ·Bullt-in damper diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed forr Motor，Relay and Solenoid driver applications ABSOL. |
| Features | erwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 MIN TYP. MAX UNIT 50 70 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 50 70 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 2mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Curre. |
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Desde 2024. D4U Semiconductor.
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