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| Part Number | 2SD1715 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD1715 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1160 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAX. |
| Features | turation Voltage IC= 7A; IB= 0.7A VBE(on) Base -Emitter On Voltage IC= 7A; VCE= 5V ICBO Collector Cutoff Current VCB= 150V; IE= 0 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 hFE-1 DC Current Gain IC= 20mA; VCE= 5V hFE-2 DC Current Gain IC= 1A; VCE= 5V hFE-3 DC Current Gain IC= 7A; VCE= 5V COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz fT Current-Gain—Bandwidth Produ. |
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| 1 | 2SD1710 |
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| 7 | 2SD1710F |
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| 8 | 2SD1711 |
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Desde 2024. D4U Semiconductor.
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