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2SD1715 |
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| Part Number | 2SD1715 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1160 ·Minimum Lot-to-Lot variations for robust device performanc... |
| Features |
turation Voltage IC= 7A; IB= 0.7A
VBE(on) Base -Emitter On Voltage
IC= 7A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 150V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
hFE-1
DC Current Gain
IC= 20mA; VCE= 5V
hFE-2
DC Current Gain
IC= 1A; VCE= 5V
hFE-3
DC Current Gain
IC= 7A; VCE= 5V
COB
Collector Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V
MIN TYP. MAX UNIT
2.0
V
1.8
V
50 μA
50 μA
20
60
200
20
140
pF
20
MHz
hFE-2 Classifications Q S P 60-120 80-160 100-200 NOTICE： ISC reserves the rights to ma... |
| Document |
 2SD1715 Data Sheet
PDF 210.08KB |
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Desde 2024. D4U Semiconductor.
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