Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 2SD1479 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD1479 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collec. |
| Features | T V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current hFE DC Current Gain IC= 2A; IB= 1A VCB= 750V; IE= 0 VCB= 1500V; IE= 0 IC= 2A; VCE= 5V 5.0 V 1.5 V 50 μA 1.0 mA 2 tstg Storage Time tf Fall Time IC= 2.5A, IBend= 1.1A, LB= 10μH 9 μs 1. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1470 |
Hitachi Semiconductor |
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| 2 | 2SD1471 |
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Silicon NPN Planar Transistor |
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| 3 | 2SD1472 |
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Silicon NPN Epitaxial Planar Transistor |
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| 4 | 2SD1474 |
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Silicon NPN Transistor |
|
| 5 | 2SD1475 |
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| 6 | 2SD1475 |
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Silicon NPN Transistor |
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| 7 | 2SD1476 |
Inchange Semiconductor |
Power Transistor |
|
| 8 | 2SD1478 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SD1478A |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 10 | 2SD1400 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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